Datasheet Details
| Part number | YJH03N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 422.16 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJH03N10A-YangzhouYangjie.pdf
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The YJH03N10A is N-Channel Enhancement Mode Field Effect Transistor designed by Yangzhou Yangjie.
| Part number | YJH03N10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 422.16 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJH03N10A-YangzhouYangjie.pdf
|
|
|
|
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation TA=25℃ TC=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Juncti
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