Datasheet Details
| Part number | YJH03N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 422.16 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJH03N10A Download (PDF) |
|
|
| Part number | YJH03N10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 422.16 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | YJH03N10A Download (PDF) |
|
|
|
● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation TA=25℃ TC=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Junction-to-Case Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA RθJC TJ ,TSTG 100 ±20 3 2.4 12 1.5 4.0 83 31 -55～+150 V V A A W W ℃/ W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJH03N10A F2 1003.
1000 10000 40000 7“ reel S-S1931 Rev.2.0,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com YJH03N10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=3A VGS= 4.5V, ID=2.4A Diode Forward Voltage VSD IS=3A,VGS=0V Maximum Body-Diode Continuous Current IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss VDS=50V,VGS=0V,f=1MHZ Reverse Transfer Capacitance Crss Switching Parameters Total Gate Charge Qg Gate-Source Charge Qgs VGS=10V,VDS=50V,ID=3A Gate-Drain Charge Qgd Turn-on Delay Time tD(on) Turn-on Rise Time Turn-off Delay Time tr tD(off) VGS=10V,VDD=50V,RL=6.
YJH03N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
| Part Number | Description |
|---|