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SM8S33 Datasheet Preview

SM8S33 Datasheet

Transient Voltage Suppressor Diode

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SM8 Series
SM8 Transient Voltage Suppressor Diode Series
General Information
The SM8 series is designed to protect voltage sensitive components from high
voltage, high energy transients. They have excellent clamping capability, high surge
capability, low zener impedance and fast response time. The SM8 series is supplied
in YINT Semiconductor’s exclusive, cost-effective, highly reliable and is ideally
suited for use in communication systems, automotive, numerical controls , process
controls, medical equipment, business machines, power supplies and many other
industrial/consumer Applications.
Molded plastic
glass passivated junction.
Features
Case: DO-218AB
For surface mounted applications in order to optimize board space.
Polarity:Color band denoted positive end (cathode) except Bidirectional.
Typical failure mode is short from over-specified voltage or current
High Temperature soldering:260°C/10 seconds at terminals.
Terminal:Solder plated,solderable per MIL-STD-750,Method 2026.
Applications
TVS devices are ideal for the
protection of I/O Interfaces, VCC bus
and other vulnerable circuits used in
Telecom, Computer, Industrial and
Consumer electronic applications.
Electrical Characteristics (@ TA = 25°C Unless Otherwise Noted)
Parameter
Symbol
Value
Minimum Peak Pulse Power Dissipation (T = 1 ms) (note1 note 2)
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
PPK
IFSM
6600
700
Steady State Power Dissipation @ TL = 75 °C
PM(AV)
8.0
Operating Temperature Range
TJ -55 to +150
Storage Temperature Range
TSTG
-55 to +175
NOTES:
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
2. Thermal Resistance Junction to Lead.
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Unit
Watts
Amps
Watts
°C
°C
WWW.YINT.COM.CN
1
REV4.0




Yint

SM8S33 Datasheet Preview

SM8S33 Datasheet

Transient Voltage Suppressor Diode

No Preview Available !

SM8 Series
Electrical Characteristics (@ TA = 25°C Unless Otherwise Noted)
Part
Number
Reverse Stand
off
Voltage VR(Volts)
Breakdown
Voltage VBR
(Volts)@IT
Min .V Max .V
SM8S12
SM8S12A
SM8S13
SM8S13A
SM8S14
SM8S14A
SM8S15
SM8S15A
SM8S16
SM8S16A
SM8S17
SM8S17A
SM8S18
SM8S18A
SM8S20
SM8S20A
SM8S22
SM8S22A
SM8S24
SM8S24A
SM8S26
SM8S26A
SM8S28
SM8S28A
SM8S30
SM8S30A
SM8S33
SM8S33A
SM8S36
SM8S36A
SM8S40
SM8S40A
SM8S43
SM8S43A
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.6
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
Test
Current
IT(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximun
Reverse
Leakage IR
@ VR(μA)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum
Peak Pulse
Current
Ipp(A)
10/1000uS
300
332
227
307
256
284
245
270
229
254
216
239
205
226
184
204
168
186
153
170
142
157
132
145
123
136
112
120
103
114
92.4
102
86
95.1
Maximum
Clamping
Voltage VC
@I pp(V)
22
19.9
23.8
21.5
25.6
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59
53
64.3
58.1
71.4
64.5
76.7
69.4
WWW.YINT.COM.CN
2
REV4.0


Part Number SM8S33
Description Transient Voltage Suppressor Diode
Maker Yint
Total Page 4 Pages
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