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BAT54S Datasheet Preview

BAT54S Datasheet

SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

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SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995 7
11
1
1
BAT54 SERIES
2
1
3
3
BAT54
SINGLE
L4Z
23
BAT54A
COMMON
ANODE
L42
32
BAT54S
SERIES
L44
23
BAT54C
COMMON
CATHODE
L43
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Continuous Reverse Voltage
Forward Current
Forward Voltage @ IF =10mA
Repetitive Peak Forward Current
Non Repetitive Forward Current t<1s
Power Dissipation at Tamb=25°C
Storage Temperature Range
JunctionTemperature
¤
VR
IF
VF
IFRM
IFSM
Ptot
Tstg
Tj
Device Type
Pin Configuration
Partmarking Detail
VALUE
30
200
400
300
600
330
-55 to +150
125
UNIT
V
mA
mV
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
30 50
V IR=10µA
Forward Voltage
VF
Reverse Current
Diode Capacitance
Reverse Recover
Time
IR
CD
trr
135 240 mV IF=0.1mA
200 320 mV IF=1mA
280 400 mV IF=10mA
350 500 mV IF=30mA
530 1000 mV IF=100mA
2.5 4
µA VR=25V
7.5 10 pF f=1MHz,VR=1V
5 ns switched from
IF=10mA to IR=10mA
RL=100, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3-4




Zetex Semiconductors

BAT54S Datasheet Preview

BAT54S Datasheet

SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

No Preview Available !

BAT54 SERIES
TYPICAL CHARACTERISTICS
1
100m
10m +125°C
+85°C
+25°C
1m
100µ
10µ
0 0.15 0.3 0.45 0.6 0.75
Forward Voltage VF (V)
IF v VF Characteristics
0.9
15
10
5
0
0
10 20
30
Reverse Voltage VR (V)
CT v VR Characteristics
10m
1m
100µ
+125°C
+85°C
10µ
+25°C
1µ
0 10 20
Reverse Voltage VR (V)
IR v VR Characteristics
30
330
270
180
90
0
0 50 100 150
TA - Ambient Temperature ( °C)
PD v TA Characteristics
3-5


Part Number BAT54S
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
Maker Zetex Semiconductors
Total Page 2 Pages
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