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BCV27 Datasheet

NPN SILICON PLANAR DARLINGTON TRANSISTORS

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SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
BCV27
BCV47
ISSUE 3 – SEPTEMBER 1995
FEATURES
* High VCEO
* Low saturation voltage
COMPLEMENTARY TYPES –
7
BCV27 – BCV28
BCV47 – BCV48
PARTMARKING DETAILS – BCV27 – ZFF
BCV47 – ZFG
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT23
PARAMETER
SYMBOL
BCV27
BCV47
UNIT
Collector-Base Voltage
VCBO
40 80
V
Collector-Emitter Voltage
VCEO
30 60
V
Emitter-Base Voltage
VEBO
10 V
Peak Pulse Current
ICM 800 mA
Continuous Collector Current
IC
500 mA
Base Current
IB 100 mA
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BCV27
BCV47 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 40
80
V IC=100µA
Collector-Emitter
V(BR)CEO 30
60
V IC=10mA*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V IE=10µA
Breakdown Voltage
Collector Cut-Off
Current
Emitter Base
Cut-Off Current
ICBO
IEBO
100 nA VCB = 30V
10
100 nA
µA
10 µA
VCB = 60V
VCB=30V,Tamb
VCB=60V,Tamb
=150oC
=150oC
100
100 nA
VEB=4V
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=100mA,IB=0.1mA*
Saturation Voltage
Base-Emitter
VBE(sat)
1.5
1.5 V
IC=100mA,IB=0.1mA*
Saturation Voltage
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
4K
10K
20K
4K
170 Typical
2K
4K
10K
2K
170 Typical
MHz
IC=100µA, VCE=1V†
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=50mA, VCE=5V
f = 20MHz
Output Capacitance Cobo
3.5 Typical 3.5 Typical pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
† Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22


Part Number BCV27
Description NPN SILICON PLANAR DARLINGTON TRANSISTORS
Maker Zetex Semiconductors
Total Page 1 Pages
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