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BFN38 Datasheet

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN38 pdf
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - JANUARY 1996 7
FEATURES:
* High VCEO and Low saturation voltage
APPLICATIONS:
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE - BFN39
PARTMARKING DETAILS - BFN38
BFN38
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
300
300
5
500
2
-55 to +150
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V IC=1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE=100µA
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
100 nA
20 µA
100 nA
VCB=250V
VCB=250V, Tamb=150°C
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5 V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
IC=20mA, IB=2mA
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
25
40
30
70
MHz
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=20mA, VCE=10V
f=100MHz
Output Capacitance Cobo
1.5 pF VCB=30V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 48


Part Number BFN38
Description SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Maker Zetex Semiconductors
Total Page 1 Pages
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