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BSS123 Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
7
PARTMARKING DETAIL
– SA
BSS123
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Drain-Gate Voltage
VDGR
100 V
Continuous Drain Current at Tamb=25°C
ID
170 mA
Pulsed Drain Current
IDM 680 mA
Gate-Source Voltage
VGS ± 20 V
Peak Gate-Source Voltage
VGSM
± 20 V
Power Dissipation at Tamb=25°C Ptot 360 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V ID=0.25mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8 2.2 2.8 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
IGSS
IDSS
RDS(on)
10 50 nA VGS=± 20V, VDS=0V
1 15 µA VDS=100V, VGS=0V
2 60 µA VDS=100V, VGS=0V, T=125°C(2)
10 nA VDS=20V, VGS=0V
5 6 VGS=10V, ID=100mA
Forward
Transconductance(1)(2)
gfs
80 120
mS VDS=25V, ID=100mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
20 pF
9 pF
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
4 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
10 ns
10 ns
15 ns VDD 30V, ID=280mA
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
3 - 70


Part Number BSS123
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Maker Zetex Semiconductors
Total Page 1 Pages
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