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Zetex Semiconductors

FZT1048A Datasheet Preview

FZT1048A Datasheet

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997
FEATURES
* VCEO = 17.5V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; RCE(sat) = 50mat 5A
FZT1048A
C
B
SOT223
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C †
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
50
17.5
5
20
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.




Zetex Semiconductors

FZT1048A Datasheet Preview

FZT1048A Datasheet

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

No Preview Available !

FZT1048A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown V(BR)CBO 50
Voltage
85
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
50
85
V IC=100µA*
Collector-Emitter
Breakdown Voltage
VCEO
17.5 24
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
50
85
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
Voltage
8.7
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
ICBO
IEBO
ICES
0.3 10
0.3 10
0.3 10
nA VCB=35V
nA VEB=4V
nA VCE=35V
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
27 45 mV IC=0.5A, IB=10mA*
55 75 mV IC=1A, IB=10mA*
155 210 mV IC=3A, IB=15mA*
250 350 mV IC=5A, IB=25mA*
920 1000 mV IC=5A, IB=25mA*
Base-Emitter Turn-On
Voltage
VBE(on)
880 970 mV IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
280 440
300 450
300 450 1200
180 300
50 80
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
150
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Switching Times
Cobo
ton
60 80 pF VCB=10V, f=1MHz
120 ns IC=4A, IB=40mA, VCC=10V
toff 310 ns IC=4A, IB=40mA, VCC=10V


Part Number FZT1048A
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Maker Zetex Semiconductors
Total Page 3 Pages
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