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FZT2222A Datasheet Preview

FZT2222A Datasheet

SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR

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SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 40 Volt VCEO
* Fast switching
FZT2222A
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT2907A
FZT2222A
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75 V
Collector-Emitter Voltage
VCEO
40 V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC 600 mA
Power Dissipation at Tamb=25°C
Ptot 2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to+150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT CONDITIONS.
MIN. MAX.
Collector-Base Breakdown V(BR)CBO 75
Voltage
V IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 40
V IC=10mA, IB=0 *
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
V IE=10µA, IC=0
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off
Current
ICBO
IEBO
ICEX
10 nA VCB=50V, IE=0
10 µA VCB=50V, IE=0, Tamb=150°C
10 nA VEB=3V, IC=0
10 nA VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3 V IC=150mA, IB=15mA*
1.0 V IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.6
1.2
V IC=150mA, IB=15mA*
2.0 V IC=500mA, IB=50mA*
Static Forward Current
Transfer Ratio
hFE
35
50
75
35
100 300
50
40
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V *
IC=10mA, VCE=10V*
IC=10mA, VCE=10V,Tamb=-55°C*
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 296




Zetex Semiconductors

FZT2222A Datasheet Preview

FZT2222A Datasheet

SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR

No Preview Available !

FZT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT CONDITIONS.
MIN. MAX.
Transition Frequency
fT
300
MHz
IC=20mA, VCE=20V
f=100MHz
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
Cibo
td
tr
ts
tf
8 pF
25 pF
10 ns
25 ns
225 ns
60 ns
VCB=10V, IE=0, f=140KHz
VEB=0.5V, IC=0 f=140KHz
VCE=30V, VBE(off=) 0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
VCE=30V, IC=150mA
IB1= IB2=15mA
(See Storage Test Circuit)
DELAY AND RISE – TEST CIRCUIT
Generator rise time <2ns
Pulse width (t 1)<200ns
Duty cycle = 2%
+30V
200
9.9V
0
0.5V
619
STORAGE TIME AND FALL TIME – TEST CIRCUIT
+30V
Scope:
Rin > 100 k
Cin < 12 pF
Rise Time < 5 ns
+16.2 V
=100µs
<5ns
0
-13.8 V
=500 µs
1K
1N916
-3V
200
Scope:
Rin > 100 k
Cin < 12 pF
Rise Time < 5 ns
Duty cycle = 2%
3 - 297


Part Number FZT2222A
Description SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR
Maker Zetex Semiconductors
Total Page 2 Pages
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