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VN10LF - N-Channel Enhancement Mode Vertical DMOS FET

Features

  • 60 Volt VDS.
  • RDS(on)=5Ω w . D at aS D G w.

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Full PDF Text Transcription

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET w VN10LF S w ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=5Ω w .D at aS D G w PARTMARKING DETAIL – MY he ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) SYMBOL BV DSS MIN. 60 TYP. MAX. UNIT V 2.5 V nA CONDITIONS. I D=100 µ A, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60 V, V GS=0V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
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