ZNBG2000X10
DESCRIPTION
The ZNBG series of devices are designed to meet the bias requirements of Ga As and HEMT FETs monly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external ponents. With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits. The ZNBG2000/1 contains two bias stages. A single resistor allows FET drain current to be set to the desired level. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG2000 gives 2.2 volts drain whilst the ZNBG2001 gives 2 volts. These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the remended gate and drain capacitors. These ensure RF stability...
