ZNBG2000X10 Description
The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs monly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external ponents. With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst...
ZNBG2000X10 Key Features
- Provides bias for GaAs and HEMT FETs
- Drives up to two FETs
- Dynamic FET protection
- Drain current set by external resistor
- Regulated negative rail generator requires only 2