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ZTX560 Datasheet Preview

ZTX560 Datasheet

E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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ZTX560
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
Excellent hFE characterisristics up to IC=50mA
Low Saturation voltages
PARTMARKING
ZTX
560
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
PIN-OUT
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
VALUE
-500
-500
-5
-500
-150
1
-55 to +150
E-LINE
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN.
Collector-base breakdown boltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
V(BR)CBO
VBR(CEO)
V(BR)EBO
ICBO ; ICES
IEBO
VCE(sat)
-500
-500
-5
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
VBE(sat)
VBE(on)
hFE
Transition frequency
fT
100
80
15 typ
60
MAX.
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
Output capacitance
Switching times
Cobo
ton
toff
8
110 typ.
1.5 typ.
pF
ns
s
* Measured under pulsed conditions. Pulse width=300s. Duty cycle Յ2%
CONDITIONS
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-500V; VCE=-500V
VEB=-5V
IC=-20mA, IB=-2mA*
IC=-50mA, IB=-10mA*
IC=-50mA, IB=-10mA*
I =-50mA,
C
VCE=-10V*
IC=-1mA, VCE =-10V
IC=-50mA, VCE =-10V*
IC=-100mA, VCE =-10V*
VCE=-20V, IC=-10mA,
f=50MHz
VCB=-20V, f=1MHz
VCE=-100V, IC=-50mA,
IB1=-5mA, IB2=10mA
ISSUE 2 - SEPTEMBER 2006
1
SEMICONDUCTORS




Zetex Semiconductors

ZTX560 Datasheet Preview

ZTX560 Datasheet

E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

No Preview Available !

ZTX560
TYPICAL CHARACTERISTICS
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2006
2


Part Number ZTX560
Description E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Maker Zetex Semiconductors
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