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ZUMT591 - PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Key Features

  • Extremely low saturation voltage.
  • 500mW power dissipation.
  • 1 Amp continuous collector current (IC).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications ZUMT591 CE B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. VALUE -80 -60 -5 -2 -1 -200 500 -55 to +150 UNIT V V V A A mA mW °C UNIT CONDITIONS.