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ZUMT591 Datasheet Preview

ZUMT591 Datasheet

PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (IC)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT591
CE
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-80
V IC=-100µA, IE=-0
Collector-Emitter
Breakdown Voltage
VCEO(sus)
-60
V IC=-10mA*, IB=-0
Emitter-Base Breakdown V(BR)EBO
Voltage
-5
V IE=-100µA, IC=-0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-100
-100
-100
-0.3
-0.6
-1.2
nA
nA
nA
V
V
V
VCB=-60V
VCE=-60V
VEB=-4V, IC=-0
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn On Voltage
VBE(on)
-1.0 V
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
IC=-1A, VCE=-5V*




Zetex Semiconductors

ZUMT591 Datasheet Preview

ZUMT591 Datasheet

PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

No Preview Available !

ZUMT591
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Static Forward Current
Transfer Ratio
hFE
100
100
80
15
300
Transition Frequency
fT
150
UNIT
MHz
Ouput Capacitance
Cobo
10 pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
CONDITIONS.
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-50mA, VCE=-10V*
f=100MHz
VCB=-10V, f=1MHz
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used,
applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products
or services concerned. The Company reserves the right to alter without notice the specification,
design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
SEMICONDUCTORS


Part Number ZUMT591
Description PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Maker Zetex Semiconductors
Total Page 2 Pages
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