ZUMT807-25 Datasheet | Zetex Semiconductors

SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - FEBRUARY 1999 PARTMARKING DETAILS ZUMT807-25 ZUMT807-40 T8 T24 ZUMT807-25 ZUMT807-40 PLEMENTARY TYPES ZUMT807-25 ZUMT807-40 - ZUMT817-25 ZUMT817-40 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB I BM P tot T j:T stg VALUE -50 -45 -5 -1 -500 -100 -200 330 -55 to +150 UNIT V V V A m A m A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -25 -40 Transition Frequency Collector-base Capacitance f T C obo SYMBOL I CBO I EBO V CE(sat) V BE(on) h FE 100 40 160 250 100 8.0 MIN. TYP. MAX. UNIT CONDITIONS. -0.1 -5 -10 -700 -1.2 600 400 600 MHz p F A A A m V V V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150°C V EB=-5V, I C=0 I C=-500m A, I B=-50m A- I C=-500m A, V CE=-1V- I C=-100m A, V CE=-1V- I C=-500m A, V CE=-1V- I C=-100m A, V CE=-1V- I C=-100m A, V CE=-1V- I C=-10m A, V CE=-5V f=35MHz I E=I e=0, V CB=-10V f=1MHz - Measured under pulsed conditions. Pulse width=300s. Duty cycle...