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Part no.
ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS
RDS(on) (Ω)
0.200 @ VGS= 4.5V
ID (A) 2.1 1.9 1.7
20
0.240 @ VGS= 2.5V 0.310 @ VGS= 1.8V
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive.
Features
• • •
Low on-resistance Low gate drive capability SOT23-6 (dual) package
Applications
• • •
Power Management functions Disconnect switches Relay driving and load switching
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Ordering information
Device Reel size (inches) Tape width (mm) Quantity per reel
G1 S2 G2
Pinout – top view
D1 S1 D2
ZXMN2088DE6TA
Device marking
2088
7
8
3,000
Issue 2 - June 2008
© Diodes Incorporated 2008
1
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