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ZXMN2B03E6 - SOT23-6 N-channel enhancement mode MOSFET

Description

This new generation trench MOSFET from Zetex

Features

  • low onresistance achievable with low gate drive. Features.
  • www. DataSheet4U. com D Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package.
  • G S.

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ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features • • www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package • • G S Applications • • • • DC-DC converters Power management functions Disconnect switches Motor control D D G Top view 3,000 D D S Ordering information Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Device marking 2B3 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.
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