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Zetex Semiconductors

ZXMP10A18K Datasheet Preview

ZXMP10A18K Datasheet

DPAK P-channel enhancement mode MOSFET

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ZXMP10A18K
100V DPAK P-channel enhancement mode MOSFET
Summary
V(BR)DSS
-100
RDS(on) ()
0.150 @ VGS= -10V
0.190 @ VGS= -6V
ID (A)
-5.9
-5.2
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
www.DataSheet4U.com
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMP10A18KTC
Reel size
(inches)
13
Tape width
(mm)
16
Quantity
per reel
2,500
Device marking
ZXMP
10A18
D
G
S
D
D
GS
Pinout - top view
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com




Zetex Semiconductors

ZXMP10A18K Datasheet Preview

ZXMP10A18K Datasheet

DPAK P-channel enhancement mode MOSFET

No Preview Available !

ZXMP10A18K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS= 10V; Tamb =25°C(b)
@ VGS= 10V; Tamb =70°C(b)
@ VGS= 10V; Tamb =25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb = 25°C(a)
Linear derating factor
Power dissipation at Tamb = 25°C(b)
Linear derating factor
Power dissipation at Tamb = 25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
-100
± 20
-5.9
-4.7
-3.8
-21.1
-10
-21.1
4.3
34.4
10.2
81.3
2.17
17.4
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
Limit
29
12.3
57.6
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXMP10A18K
Description DPAK P-channel enhancement mode MOSFET
Maker Zetex Semiconductors
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ZXMP10A18K Datasheet PDF






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