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ZXTEM322 Datasheet Preview

ZXTEM322 Datasheet

NPN LOW SATURATION TRANSISTOR

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MPPSTM Miniature Package Power Solutions
80V NPN LOW SATURATION TRANSISTOR
SUMMARY
NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A
DESCRIPTION
Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (185mV max @1A)
hFE specified up to 5A
IC=-3.5A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters
DC - DC Modules
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL TAPE QUANTITY
SIZE WIDTH PER REEL
ZXTEM322TA
7” 8mm
3000
ZXTEM322TC
13” 8mm
10000
DEVICE MARKING
SE
ISSUE 2 - JUNE 2006
1
ZXTEM322
MLP322
Underside View
SEMICONDUCTORS




Zetex Semiconductors

ZXTEM322 Datasheet Preview

ZXTEM322 Datasheet

NPN LOW SATURATION TRANSISTOR

No Preview Available !

ZXTEM322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Power Dissipation at TA=25°C (d)
Linear Derating Factor
Power Dissipation at TA=25°C (e)
Linear Derating Factor
Operating & Storage Temperature Range
Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
PD
PD
PD
PD
Tj:Tstg
Tj
LIMIT
100
80
7.5
5
3.5
1000
1.5
12
2.45
19.6
1
8
3
24
-55 to +150
150
UNIT
V
V
V
A
A
mA
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
W
mW/ЊC
ЊC
ЊC
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
RJA
RJA
RJA
RJA
83 ЊC/W
51 ЊC/W
125 ЊC/W
42 ЊC/W
NOTES
(a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at tՅ5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW
SEMICONDUCTORS
2
ISSUE 2 - JUNE 2006


Part Number ZXTEM322
Description NPN LOW SATURATION TRANSISTOR
Maker Zetex Semiconductors
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