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Zetex Semiconductors

ZXTN25040DFL Datasheet Preview

ZXTN25040DFL Datasheet

NPN low power transistor

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ZXTN25040DFL
40V, SOT23, NPN low power transistor
Summary
BVCEX > 130V
BVCEO > 40V
BVECO > 6V
IC(cont) = 1.5A
VCE(sat) < 85mV @ 1A
RCE(sat) = 59m
PD = 350mW
Complementary part number ZXTP25040DFL
www.DataSheet4U.com
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
• High peak current
• Low saturation voltage
• 130V forward blocking voltage
• 6V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and loads
Ordering information
C
B
E
E
C
B
Pinout - top view
Device
ZXTN25040DFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3000
Device marking
1B7
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com




Zetex Semiconductors

ZXTN25040DFL Datasheet Preview

ZXTN25040DFL Datasheet

NPN low power transistor

No Preview Available !

ZXTN25040DFL
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(a)
Base current
Peak pulse current
Power dissipation at Tamb = 25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
Tj, Tstg
Limit
130
130
40
6
7
1.5
0.5
6
350
Unit
V
V
V
V
V
A
A
A
mW
2.8
-55 to 150
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Symbol
RJA
Limit
357
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXTN25040DFL
Description NPN low power transistor
Maker Zetex Semiconductors
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ZXTN25040DFL Datasheet PDF






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