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Zetex Semiconductors

ZXTP25012EFH Datasheet Preview

ZXTP25012EFH Datasheet

PNP medium power transistor

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ZXTP25012EFH
12V, SOT23, PNP medium power transistor
Summary
BVCEO > -12V
hFE > 500
IC(cont) = -4A
RCE(sat) = 40m
VCE(sat) < -65mV @ 1A
PD = 1.25W
Complementary part number ZXTN25012EFH
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
www.DataSheet4U.com
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain, 500 minimum
• Low saturation voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Line disconnect switch
Ordering information
Device
ZXTP25012EFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1E8
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
1
C
B
E
E
C
B
Pinout - top view
www.zetex.com




Zetex Semiconductors

ZXTP25012EFH Datasheet Preview

ZXTP25012EFH Datasheet

PNP medium power transistor

No Preview Available !

ZXTP25012EFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current(b)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(c)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
VCBO
VCEO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
-12
-12
-7
-4
-1
-10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Symbol
RJA
RJA
RJA
RJA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXTP25012EFH
Description PNP medium power transistor
Maker Zetex Semiconductors
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