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Zetex Semiconductors

ZXTP25020DFH Datasheet Preview

ZXTP25020DFH Datasheet

PNP medium power transistor

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ZXTP25020DFH
20V, SOT23, PNP medium power transistor
Summary
BVCEO > -20V
BVECO > -4V
IC(cont) = 4A
VCE(sat) < 60 mV @ 1A
RCE(sat) = 39 m
PD = 1.25W
Complementary part number ZXTN25020DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
www.DataSheet4U.com
Features
• High power dissipation SOT23 package
• High peak current
• High gain
• Low saturation voltage
Applications
• MOSFET gate drivers
• Power switches
• Motor control
Ordering information
C
B
E
E
C
B
Pinout - top view
Device
ZXTP25020DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3000
Device marking
1A3
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com




Zetex Semiconductors

ZXTP25020DFH Datasheet Preview

ZXTP25020DFH Datasheet

PNP medium power transistor

No Preview Available !

ZXTP25020DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(c)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(c)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
-25
-20
-4
-7
-4
-1
-10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As (c) above measured at t<5 seconds.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXTP25020DFH
Description PNP medium power transistor
Maker Zetex Semiconductors
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ZXTP25020DFH Datasheet PDF






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