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LL4448 Datasheet Preview

LL4448 Datasheet

SILICON EPITAXIAL PLANAR DIODES

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LL4148, LL4448
SILICON EPITAXIAL PLANAR DIODES
Reverse Voltage 100 Volts
Peak Forward Current - 500mA
SOD-80
Cathode Indification
0.146(3.70)
0.130(3.30)
0.063(1.60)
0.055(1.40)
0.012(0.30)
Glass case
Mini MELF / SOD 80
JEDEC DO 213AA
technical drawings
accarding to DIN
specifications
FEATURES
* Electrical data identical with the devices 1N4148
* and 1N4448 respectively
* Extreme fast switches
MECHANICAL DATA
Case : Mini MELF SOD-80 Glass Case
Weight : approx. 0.05 gram
*Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS ( TJ=25oC )
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current
Repetitive Peak Forward Current
Forward Current
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Test Conditions
SYMBOL
VRRM
tp = 1 us
VR
IFSM
IFRM
IF
VR = 0
IFAV
PV
TJ
TSTG
MAXIMUM THERMAL RESISTANCE ( TJ=25oC )
VALUE
100
75
2
500
300
150
500
175
-65 to +175
PARAMETER
Junction Ambient
PARAMETER
Forward Voltage
Reverse Current
Breakdown Voltage
Diode Capacitance
Rectification Efficiency
Reverse Recovery Time
TEST CONDITIONS
SYMBOL
on PC Board 50mm x 50mm x 1.6mm
R JA
o
MAXIMUM THERMAL RESISTANCE ( TJ=25 C )
TEST CONDITIONS
SYMBOL
MIN.
( IF = 5 mA )
( IF = 50 mA )
( IF = 100 mA )
( Type : LL4448 )
( Type : LL4148 )
( Type : LL4448 )
0.62
VF -
-
( VR = 20 V )
( VR = 20 V, TJ=150oC )
( VR = 75 V )
( IR = 100 uA, tp/T = 0.01, tp = 0.3 ms )
IR
V(BR)
-
-
-
100
( VR = 0, f=1.0MHz, VHF = 50mV )
CD -
( VHF = 2 V, f = 100MHZ )
( IF = IR = 10mA, IR = 1mA )
( IF = 10mA, VR = 6 V, IR = 0.1 X IR, RL = 100 )
r
trr
45
-
-
VALUE
500
TYP.
-
0.86
0.93
-
-
-
-
-
-
-
-
MAX.
0.72
1.0
1.0
25
50
5.0
-
4
-
8
4
UNIT
V
V
A
mA
mA
mA
mW
oC
oC
UNIT
K/W
UNIT
Volts
nAdc
uAdc
Volts
pF
%
nS
REV. : 0
Zowie Technology Corporation




Zowie Technology Corporation

LL4448 Datasheet Preview

LL4448 Datasheet

SILICON EPITAXIAL PLANAR DIODES

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES LL4148, LL4448
FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE
1000
LL4148
100
Scattering Limit
10
1
0.1
0
TJ = 25oC
0.4 0.8 1.2 1.6
VF - FORWARD VOLTAGE ( V )
2.0
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
1000
LL4448
100
Scattering Limit
10
TJ = 25oC
1
0.1
0
0.4 0.8 1.2 1.6
VF - FORWARD VOLTAGE ( V )
2.0
FIG.3 - REVERSSE CURRENT VS. REVERSE VOLTAGE
1000
TJ = 25oC
100
Scattering Limit
10
1
1 0 100
VR - REVERSE VOLTAGE ( V )
FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
1 10
VR - REVERSE VOLTAGE ( V )
100
REV. : 0
Zowie Technology Corporation


Part Number LL4448
Description SILICON EPITAXIAL PLANAR DIODES
Maker Zowie Technology Corporation
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LL4448 Datasheet PDF






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