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FTU01N60G Datasheet Preview

FTU01N60G Datasheet

600V N-Channel MOSFET

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600V N-Channel MOSFET
General Features
Low ON Resistance
Low Gate Charge (typical 4.8nC)
Fast Switching
100% Avalanche Tested
RoHS Compliant
Halogen-free available
Applications
High Efficiency SMPS
CFL
Active PFC
Low Power Lamp Ballasts
Low Power Adaptor/Battery Chargers
FTU01N60/FTD01N60
BVDSS
600V
RDS(ON) (Max.)
9.0
ID
1.0A
Ordering Information
Part Number
Package
FTU01N60
TO-251I-PAK
FTU01N60G TO-251I-PAK
FTD01N60
TO-252D-PAK
FTD01N60G TO-252D-PAK
Marking
01N60
01N60G
01N60
01N60G
Remark
RoHS
Halogen-free
RoHS
Halogen-free
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100
IDM
PD
Continuous Drain Current
Pulsed Drain Current, VGS@10V[2]
Power Dissipation
Derating Factor above 25
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=40mH, ID=1.0A
Peak Diode Recovery dv/dt[3]
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
TC=25unless otherwise specified
FTU01N60
FTD01N60
Unit
600 V
1.0
Figure 3
A
Figure 6
29 W
0.23 W/
±30 V
20 mJ
4.5 V/ns
300
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
1/11
Rev. 2.1 Jan. 2012




ark

FTU01N60G Datasheet Preview

FTU01N60G Datasheet

600V N-Channel MOSFET

No Preview Available !

Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
FTU01N60/FTD01N60
FTU01N60
FTD01N60
4.3
100
Unit
/W
Electrical Characteristics
OFF Characteristics
Symbol
Parameter
TC =25unless otherwise specified
Min. Typ. Max. Unit
Test Conditions
BVDSS
Drain-to-Source Breakdown
Voltage
600 -- -- V
VGS=0V, ID=250µA
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
--
0.6
-- V/
Reference to 25,
ID=250µA
-- -- 20
VDS=600V, VGS=0V
IDSS
Drain-to-Source Leakage Current
--
µA
-- 100
VDS=480V, VGS=0V,
TC=125
-- -- 100
IGSS Gate-to-Source Leakage Current
nA
-- -- -100
VGS=+30V
VGS=-30V
ON Characteristics
Symbol
Parameter
RDS(ON) Static Drain-to-Source On-Resistance
VGS(TH) Gate Threshold Voltage
gfs Forward Transconductance
Min.
--
2.0
--
Typ.
7.2
--
0.9
Max.
9.0
4.0
--
TC =25unless otherwise specified
Unit Test Conditions
VGS=10V, ID=0.5A[4]
V VDS = VGS, ID=250µA
S VDS =15V, ID=1.0A[4]
Dynamic Characteristics
Symbol
Parameter
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
QG Total Gate Charge
QGS Gate-to-Source Charge
QGD Gate-to-Drain (Miller) Charge
Min.
--
--
--
--
--
--
Essentially independent of operating temperature
Typ. Max. Unit
Test Conditions
163 --
12.8 --
2.5 --
pF
VGS=0V
VDS=25V
f=1.0MHZ
Figure 14
4.8 --
0.7 -- nC
2.2 --
VDD=300V
ID=1.0A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON) Turn-on Delay Time
trise
td(OFF)
Rise Time
Turn-off Delay Time
tfall Fall Time
ARK Microelectronics Co., Ltd.
Essentially independent of operating temperature
Min. Typ. Max. Unit
Test Conditions
-- 6 --
-- 13 --
ns
-- 13 --
-- 27 --
VDD=300V
ID=1.0A
VGS=10V
RG=20
w w w. a r k - m i c r o . c o m
Rev. 2.1 Jan. 2012
2/11


Part Number FTU01N60G
Description 600V N-Channel MOSFET
Maker ark
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