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PROCESS
Small Signal Transistor
CP788X
PNP - Low Noise Amplifier Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 91,469 PRINCIPAL DEVICE TYPE CMKT5087 EPITAXIAL PLANAR 13.7 x 13.7 MILS 5.9 MILS 4.0 x 4.0 MILS 5.5 x 5.5 MILS Al-Si - 30,000Å Au - 12,000Å
BACKSIDE COLLECTOR
R0
R1 (29-April 2010)
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PROCESS
CP788X
Typical Electrical Characteristics
R1 (29-April 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.