CP788X Datasheet | centralsemi

PROCESS Small Signal Transistor - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 91,469 PRINCIPAL DEVICE TYPE CMKT5087 EPITAXIAL PLANAR 13.7 x 13.7 MILS 5.9 MILS 4.0 x 4.0 MILS 5.5 x 5.5 MILS Al-Si - 30,000Å Au - 12,000Å BACKSIDE COLLECTOR R0 R1 (29-April 2010) w w w. c e n t r a l s e m i . c o m http://.. PROCESS Typical Electrical Characteristics R1 (29-April 2010) w w w. c e n t r a l s e m i . c o m...