Datasheet Summary
PROCESS
Schottky Diode
1 Amp Schottky Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 32 x 32 MILS 5.9 MILS 27 x 27 MILS Al
- 20,000Å Au
- 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 16,276 PRINCIPAL DEVICE TYPES CMLSH1-40 CXSH-4 CTLSH1-40M832D
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PROCESS
Typical Electrical Characteristics
R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m...