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CSD16322Q5
SLPS219C – AUGUST 2009 – REVISED OCTOBER 2023
N-Channel NexFET™ Power MOSFET
RDS(on) − On-State Resistance − mW VG − Gate Voltage − V
1 Features
• Optimized for 5 V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Synchronous or Control FET Applications
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
CSD16322Q5 Datasheet
