CSD16322Q5
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. S1 8D S2 7D S3 6D D G4 5D P0094-01 Top View 12 11 ID = 20A 10 9 8 TC = 125°C 7 6 5 4 3 TC = 25°C 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate to Source Voltage - V G006 RDS(on) vs VGS Product Summary VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5 V) 6.8 nC Qgd Gate Charge Gate to Drain 1.3 nC VGS = 3 V 5.4 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5 V 4.6 mΩ VGS = 8 V 3.9 mΩ VGS(th) Threshold Voltage 1.1 V Device CSD16322Q5.
Key Features
- Optimized for 5 V Gate Drive
- Ultralow Qg and Qgd
- Low - Avalanche Rated
- Pb Free Terminal Plating
- RoHS compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
