CSD16323Q3 Description
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. (2) Max RθJC = 1.7°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. CSD16323Q3 SLPS224C AUGUST 2009 REVISED NOVEMBER 2016 .ti.
CSD16323Q3 Key Features
- 1 Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS pliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
CSD16323Q3 Applications
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele and puting Systems
- Optimized for Control or Synchronous FET Applications