CSD16323Q3 Datasheet | Texas Instruments

Features - 1 Optimized for 5-V Gate Drive - Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - SON 3.3-mm × 3.3-mm Plastic Package 2 Applications - Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele and puting Systems - Optimized for Control or Synchronous FET Applications 3 Description This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON Nex FET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance Vth Threshold Voltage TYPICAL VALUE VGS = 3...