CSD16325Q5
FEATURES
- 2 Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Tele and puting Systems
- Optimized for Synchronous FET Applications
DESCRIPTION
The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0094-01
VDS Qg Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Drain to Source On Resistance Threshold Voltage
VGS = 3V VGS = 4.5V VGS = 8V
V n C n C 2.1 mΩ 1.7 mΩ 1.5 mΩ V
ORDERING...
