Datasheet Details
| Part number | CSD16327Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 449.80 KB |
| Description | 25-V N-Channel Power MOSFET |
| Download | CSD16327Q3 Download (PDF) |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16327Q3 SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016 CSD16327Q3 25-V N-Channel NexFET™ Power MOSFET.
| Part number | CSD16327Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 449.80 KB |
| Description | 25-V N-Channel Power MOSFET |
| Download | CSD16327Q3 Download (PDF) |
|
|
|
This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 +10 / –8 60 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 112 A Continuous Drain Current(1) 22 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 240 A 2.8 W 74 TJ, Operating Junction Temperature, Tstg Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω 125 mJ (1) Typical RθJA = 45°C/W on 1-in2 Cu (2 oz) on 0.06-in thick FR4 PCB.
(2) Max RθJC = 1.7°C/W pulse width ≤100
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