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CSD16340Q3 Datasheet 25-V N-Channel Power MOSFET

Manufacturer: Texas Instruments

General Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance Vth Threshold Voltage VALUE 25 6.5 1.2 VGS = 2.5 V 6.1 VGS = 4.5 V 4.3 VGS = 8 V 3.8 0.85 UNIT V nC nC mΩ mΩ mΩ V Device CSD16340Q3 CSD16340Q3T .

Ordering Information(1) Media Qty Package Ship 13-Inch Reel 2500 SON 3.3 x 3.3 mm Tape and 7-Inch Reel 250 Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16340Q3 SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Optimized for 5 V Gate Drive.
  • Resistance Rated at VGS =2.5 V.
  • Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3-mm × 3.3-mm Plastic Package 2.