CSD16340Q3
Description
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance Vth Threshold Voltage VALUE 25 6.5 1.2 VGS = 2.5 V 6.1 VGS = 4.5 V 4.3 VGS = 8 V 3.8 0.85 UNIT V nC nC mΩ mΩ mΩ V Device CSD16340Q3 CSD16340Q3T.
Key Features
- 1 Optimized for 5 V Gate Drive
- Resistance Rated at VGS =2.5 V
- Ultra-Low Qg and Qgd
- Low - Avalanche Rated
- Pb Free Terminal Plating
- RoHS compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
