Datasheet Details
| Part number | CSD16401Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 394.03 KB |
| Description | 25-V N-Channel Power MOSFET |
| Datasheet | CSD16401Q5-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16401Q5 SLPS200C – AUGUST 2009 – REVISED JANUARY 2018 CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET.
| Part number | CSD16401Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 394.03 KB |
| Description | 25-V N-Channel Power MOSFET |
| Datasheet | CSD16401Q5-etcTI.pdf |
|
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This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge, Total (4.5 V) Qgd Gate Charge, Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage VALUE 25 21 5.2 VGS = 4.5 V 1.8 VGS = 10 V 1.3 1.5 UNIT V nC nC mΩ V DEVICE CSD16401Q5 Device Information(1) MEDIA QTY PACKAGE 13-Inch Reel 2500 SON 5.00-mm × 6.00-mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 –12 to 16 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω 261 A 38 240 A 3.1 W 156 –55 to 150 °C 500 mJ (1) RθJA = 40°C/W on 1-in2 (6.45-cm2) Cu 2-oz (0.071-mm) thick on 0.06-in (1.52-mm) thick FR4 PCB.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| CICLON | CSD16401Q5 | NexFET Power MOSFETs | CICLON |
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