Datasheet4U Logo Datasheet4U.com

CSD16403Q5A Datasheet N-Channel Power MOSFET

Manufacturer: Texas Instruments

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 10 8 6D D 5D P0093-01 RDS(ON) vs VGS ID = 20A 6 TC = 125°C 4 2 TC = 25°C 0 0 2 4 6 8 10 12 VGS − Gate to Source Voltage − V G006 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 13.3 nC Qgd Gate Charge Gate to Drain 3.5 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 2.9 mΩ 2.2 mΩ VGS(th) Threshold Voltage 1.6 V ORDERING INFORMATION Device Package Media Qty CSD16403Q5A SON 5X6 Plastic Package 13-inch reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 67A, L = 0.1mH, RG = 25Ω VALUE 25 +16 / –12 100 28 184 3.1 –55 to 150 224 (1) RqJA = 41°C/W on 1in2 Cu FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2% UNIT V V A A A W °C mJ 12 ID = 20A 10 VDS = 12.5V Gate Charge 8 6 4 2 0 0 3 6 9 12 15 18 21 24 27 30 33 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and d

Overview

CSD16403Q5A www.ti.com SLPS201A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16403Q5A RDS(on) − On-State Resistance − mΩ VG − Gate Voltage −.

Key Features

  • 1.
  • 2 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5mm x 6mm Plastic Package.