CSD16403Q5A
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 10 8 6D D 5D P0093-01 RDS(ON) vs VGS ID = 20A 6 TC = 125°C 4 2 TC = 25°C 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V G006 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 13.3 nC Qgd Gate Charge Gate to Drain 3.5 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 2.9 mΩ 2.2 mΩ VGS(th) Threshold Voltage 1.6 V.
Key Features
- 2 Ultra Low Qg and Qgd
- Low - Avalanche Rated
- Pb Free Terminal Plating
- RoHS compliant
- Halogen Free
- SON 5mm x 6mm Plastic Package
