CSD17510Q5A Datasheet | Texas Instruments

FEATURES - 2 Ultralow Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package APPLICATIONS - Point-of-Load Synchronous Buck in Networking, Tele, and puting Systems - Optimized for Control and Synchronous FET Applications DESCRIPTION The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V V n C n C 5.4 mΩ 4.1 mΩ V Text Added For Spacing ORDERING INFORMATION Device Package Media...