CSD17551Q3A
Description
This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 6.0 1.5 VGS = 4.5 V VGS = 10 V 1.6 9.6 7.8 UNIT V nC nC mΩ mΩ V DEVICE CSD17551Q3A CSD17551Q3AT.
Key Features
- 1 Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free
- RoHS Compliant
- Halogen Free
- SON 3.3 mm × 3.3 mm Plastic Package
