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CSD17551Q3A Datasheet N-Channel MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD17551Q3A SLPS386B – SEPTEMBER 2012 – REVISED JANUARY 2016 CSD17551Q3A 30-V N-Channel NexFET™ Power MOSFETs.

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General Description

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 6.0 1.5 VGS = 4.5 V VGS = 10 V 1.6 9.6 7.8 UNIT V nC nC mΩ mΩ V DEVICE CSD17551Q3A CSD17551Q3AT Ordering Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel SON 3.3 mm × 3.3 mm 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current, Silicon Limited Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction Temperature, Tstg Storage Temperature EAS Avalanche Energy, single pulse ID = 25 A, L = 0.1 mH, RG = 25 Ω VALUE 30 ±20 48 48 12 71 2.6 UNIT V V A A A A W –55 to 150 °C 31 mJ (1) Typical RθJA = 48°C/W on a 1 inch2 (6.45 cm2), 2 oz.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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