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CSD17551Q5A - N-Channel MOSFET

General Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

Key Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD17551Q5A www.ti.com 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17551Q5A SLPS375 – MAY 2012 FEATURES 1 • Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point of load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Control FET Applications DESCRIPTION The NexFET power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S1 8D S2 7D S3 G4 25 20 6D D 5D P0093-01 RDS(on) vs VGS TC = 25°C Id = 11A TC = 125ºC Id = 11A VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 6.0 Gate Charge Gate to Drain 1.