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CSD17552Q5A - N-Channel MOSFET

General Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

Key Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD17552Q5A www.ti.com 30-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17552Q5A SLPS428 – NOVEMBER 2012 RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) FEATURES 1 • Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point of load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Control FET Applications DESCRIPTION The NexFET power MOSFET has been designed to minimize losses in power conversion applications. Figure 1.