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CSD18509Q5B Datasheet Preview

CSD18509Q5B Datasheet

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CSD18509Q5B
SLPS476A – JUNE 2014 – REVISED MAY 2017
CSD18509Q5B N-Channel NexFET™ Power MOSFETs
1 Features
1 Ultra-Low On Resistance
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
150
17
VGS = 4.5 V 1.3
VGS = 10 V
1.0
1.8
UNIT
V
nC
nC
m
m
V
Device
CSD18509Q5B
CSD18509Q5BT
Ordering Information(1)
Qty
Media
Package
2500 13-Inch Reel SON 5 × 6 mm
250 7-Inch Reel Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power
MOSFET has been designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
40
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
299
A
Continuous Drain Current(1)
38
IDM Pulsed Drain Current, TA = 25°C(2)
Power Dissipation(1)
PD
Power Dissipation, TC = 25°C
400
A
3.1
W
195
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 83, L = 0.1 mH, RG = 25
345
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, Pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
5
4.5
TC = 25°C,I D = 32A
TC = 125°C,I D = 32A
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 32A
VDS = 20V
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD18509Q5B Datasheet Preview

CSD18509Q5B Datasheet

Power MOSFETs

No Preview Available !

CSD18509Q5B
SLPS476A – JUNE 2014 – REVISED MAY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5B Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 Q5B Tape and Reel Information ............................. 10
4 Revision History
Changes from Original (June 2014) to Revision A
Page
• Added the Receiving Notification of Documentation Updates and Community Resources sections to Device and
Documentation Support. ........................................................................................................................................................ 7
• Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB
Pattern section diagram ......................................................................................................................................................... 9
2
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Copyright © 2014–2017, Texas Instruments Incorporated
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