Datasheet4U Logo Datasheet4U.com

CSD18535KCS - N-Channel MOSFET

General Description

This 60 V, 1.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • TO-220 Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CSD1833 NPN SILICON EPITAXIAL POWER TRANSISTOR CDIL
CSD10060 ZERO RECOVERY RECTIFIER ETC
CSD10060A ZERO RECOVERY RECTIFIER ETC
CSD10060B ZERO RECOVERY RECTIFIER ETC
CSD10060G ZERO RECOVERY RECTIFIER ETC

Other Datasheets by Texas Instruments

Part Number Description
CSD18535KTT N-Channel MOSFET
CSD18531Q5A N-Channel MOSFET
CSD18532KCS 60V N-Channel MOSFET
CSD18532NQ5B N-Channel MOSFET
CSD18532Q5B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18535KCS SLPS531 – MARCH 2015 CSD18535KCS 60 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60 V, 1.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 63 10.