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CSD19505KCS Datasheet 80V N-Channel NexFET Power MOSFET

Manufacturer: Texas Instruments

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General Description

This 80 V, 2.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 10 9 TC = 25°C, ID = 100A TC = 125°C, ID = 100A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 80 Qg Gate Charge Total (10V) 76 Qgd Gate Charge Gate to Drain 11 RDS(on) Drain-to-Source On-Resistance VGS = 6V VGS = 10V 2.9 2.6 VGS(th) Threshold Voltage 2.6 UNIT V nC nC mΩ mΩ V Device Ordering Information(1) Package Media Qty Ship CSD19505KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 80 ±20 150 Continuous Drain Current (Silicon limited), ID TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 101A, L = 0.1mH, RG = 25Ω 208 147 400 300 –55 to 175 510 UNIT V V A A W °C mJ (1) Max RθJC = 0.5°C/W, pulse duration ≤100μs, duty cycle ≤1% 10 9 ID = 100A VDS = 40V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 Qg - Gate Charge (nC) G001 Gate Charge An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safet

Overview

CSD19505KCS SLPS480C – JANUARY 2014 – REVISED APRIL 2024 CSD19505KCS 80V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V).

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Pb-free terminal plating.
  • RoHS compliant.
  • Halogen Free.
  • TO-220 plastic package 2.

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