Datasheet Details
| Part number | CSD19532Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 867.66 KB |
| Description | 100V N-Channel Power MOSFET |
| Datasheet |
 CSD19532Q5B Datasheet
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General Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Key Features
- 1 Low Qg and Qgd.
- Low Thermal Resistance.
- Avalanche Rated.
- Pb-Free Terminal Plating.
- RoHS Compliant.
- Halogen Free.
- SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.