Datasheet Details
| Part number | CSD25302Q2 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 133.05 KB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 CSD25302Q2 Datasheet
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| Part number | CSD25302Q2 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 133.05 KB |
| Description | P-Channel Power MOSFET |
| Datasheet |
CSD25302Q2 Datasheet
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The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
Low on resistance coupled with the extremely small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View S1 S 6S PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (–4.5V) 2.6 nC Qgd Gate Charge Gate to Drain 0.5 nC VGS = –1.8V 71 mΩ RDS(on) Drain to Source On Resistance VGS = –2.5V 56 mΩ VGS = –4.5V 39 mΩ VGS(th) Threshold Voltage –0.65 V ORDERING INFORMATION Device Package Media Qty CSD25302Q2 SON 2-mm × 2-mm Plastic Package 13-Inch Reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range VALUE –20 ±8 –5 –5 –20 2.4 –55 to 150 (1) Package Limited (2) Pulse duration 10 µs, duty cycle ≤2% UNIT V V A A A W °C S2 5S G3 D 4D P0112-01 RDS(on) vs VGS 150 ID = −3A 125 GATE CHARGE 6 ID = −3A 5 VDS = −10V RDS(on) − On-State Resistance − mΩ −VGS − Gate Voltage − V 100 4 75 TC = 125°C 3 50 2 25 0 1 TC = 25°C 2 3 4 5 6 7 −VGS − Gate to Source Voltage − V 8 G006 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical app
CSD25302Q2 www.ti.com SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 P-Channel NexFET™ Power.
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