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CSD25302Q2 Datasheet Preview

CSD25302Q2 Datasheet

P-Channel Power MOSFET

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CSD25302Q2
www.ti.com
SLPS234B NOVEMBER 2009 REVISED JANUARY 2012
P-Channel NexFETPower MOSFET
FEATURES
1
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package
APPLICATIONS
Battery Management
Load Management
Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
extremely small footprint and low profile make the
device ideal for battery operated space constrained
applications.
Top View
S1
S
6S
PRODUCT SUMMARY
VDS
Drain to Source Voltage
20
V
Qg
Gate Charge Total (4.5V)
2.6
nC
Qgd
Gate Charge Gate to Drain
0.5
nC
VGS = 1.8V
71 m
RDS(on) Drain to Source On Resistance VGS = 2.5V
56 m
VGS = 4.5V
39 m
VGS(th) Threshold Voltage
0.65
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD25302Q2
SON 2-mm × 2-mm
Plastic Package
13-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS
Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM
Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation
TJ,
TSTG
Operating Junction and Storage
Temperature Range
VALUE
20
±8
5
5
20
2.4
55 to 150
(1) Package Limited
(2) Pulse duration 10 µs, duty cycle 2%
UNIT
V
V
A
A
A
W
°C
S2
5S
G3
D
4D
P0112-01
RDS(on) vs VGS
150
ID = −3A
125
GATE CHARGE
6
ID = −3A
5 VDS = −10V
100
4
75
TC = 125°C
3
50
2
25
0
1
TC = 25°C
2
3
4
5
6
7
−VGS − Gate to Source Voltage − V
8
G006
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 20092012, Texas Instruments Incorporated




etcTI

CSD25302Q2 Datasheet Preview

CSD25302Q2 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25302Q2
SLPS234B NOVEMBER 2009 REVISED JANUARY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage
Gate to Source Leakage
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs
Transconductance
Dynamic Characteristics
VGS = 0V, IDS = 250μA
VGS = 0V, VDS = 16V
VDS = 0V, VGS = ±8V
VDS = VGS, IDS = 250μA
VGS = 1.8V, IDS = 3.0A
VGS = 2.5V, IDS = 3.0A
VGS = 4.5V, IDS = 3.0A
VDS = 10V, IDS = 3.0A
CISS
COSS
CRSS
Qg
Qgd
Qgs
Qg(th)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, IDS = 3.0A
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
Diode Characteristics
VDS = 13V, VGS = 0V
VDS = 10V, VGS = 4.5V, IDS = 3.0A, RG = 2
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
IDS = 3.0A, VGS = 0V
Vdd= 13V, IF = 3.0A, di/dt = 300A/μs
MIN TYP MAX UNIT
20
V
1 μA
100 nA
0.5 0.65 0.9 V
71 92 m
56 70 m
39 49 m
12.3
S
270 350 pF
120 150 pF
40 55 pF
2.6 3.4 nC
0.5
nC
0.54
nC
0.2
nC
2.3
nC
3.2
ns
13.2
ns
8.6
ns
1.3
ns
0.8 1.0 V
2.5
nC
8.8
ns
THERMAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
RθJC
RθJA
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN TYP MAX UNIT
8.6 °C/W
66 °C/W
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the users board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Copyright © 20092012, Texas Instruments Incorporated


Part Number CSD25302Q2
Description P-Channel Power MOSFET
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