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CSD25404Q3 Datasheet Preview

CSD25404Q3 Datasheet

P-Channel Power MOSFET

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CSD25404Q3
SLPS570 – NOVEMBER 2015
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Low RDS(on)
• Halogen Free
• RoHS Compliant
• Pb Free Terminal Plating
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
3 Description
This –20 V, 5.5 mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion load
management applications with a SON 3.3 mm × 3.3
mm package that offers an excellent thermal
performance for the size of the device.
Top View
D1
D2
8S
7S
D3
4
G
6S
S
5
S
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain-to-source on resistance
Vth
Threshold voltage
TYPICAL VALUE
–20
10.9
2.2
VGS = –1.8 V
VGS = –2.5 V
VGS = –4.5 V
–0.9
40
10.1
5.5
UNIT
V
nC
nC
m
m
m
V
DEVICE
CSD25404Q3
CSD25404Q3T
Ordering Information(1)
QTY MEDIA
PACKAGE
2500 13-Inch Reel SON 3.3 mm × 3.3
250 7-Inch Reel mm Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current, TC = 25°C
ID
Continuous drain current (package limit)
Continuous drain current(1)
IDM Pulsed drain current(2)
Power dissipation(1)
PD
Power dissipation, TC = 25°C
TJ, Operating junction,
Tstg storage temperature
VALUE
–20
±12
–104
–60
–18
–240
2.8
96
UNIT
V
V
A
A
W
–55 to 150 °C
(1) RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4
PCB.
(2) Max RθJC = 1.3, pulse duration 100 µs, duty cycle 1%.
RDS(on) vs VGS
24
TC = 25°C, I D = -10 A
21
TC = 125°C, I D = -10 A
18
15
12
9
6
3
0
0
2
4
6
8
10
12
-VGS - Gate-To-Source Voltage (V)
D007
8
ID = -10 A
7 VDS = -10 V
6
5
4
3
2
1
0
024
Gate Charge
6 8 10 12 14 16 18 20
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD25404Q3 Datasheet Preview

CSD25404Q3 Datasheet

P-Channel Power MOSFET

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CSD25404Q3
SLPS570 – NOVEMBER 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD25404Q3 Package Dimensions......................... 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening ............................... 9
7.4 Q3 Tape and Reel Information................................ 10
4 Revision History
DATE
November 2015
REVISION
*
NOTES
Initial release.
2
Submit Documentation Feedback
Product Folder Links: CSD25404Q3
Copyright © 2015, Texas Instruments Incorporated


Part Number CSD25404Q3
Description P-Channel Power MOSFET
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