CSD25404Q3
Features
- 1 Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Low RDS(on)
- Halogen Free
- Ro HS pliant
- Pb Free Terminal Plating
- SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
- DC-DC Converters
- Battery Management
- Load Switch
- Battery Protection
3 Description
This
- 20 V, 5.5 mΩ Nex FET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Top View
D1 D2
8S 7S
D3
4 G
6S
Product Summary
TA = 25°C
Drain-to-source voltage
Qg
Gate charge total (- 4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain-to-source on resistance
Vth
Threshold voltage
TYPICAL VALUE
- 20
VGS =
- 1.8 V VGS...
