ISO7831F Datasheet | Texas Instruments

Features - 1 Signaling Rate: Up to 100 Mbps - Wide Supply Range: 2.25 V to 5.5 V - 2.25 V to 5.5 V Level Translation - Wide Temperature Range: - 55°C to 125°C - Low Power Consumption, Typical 1.7 m A per Channel at 1 Mbps - Low Propagation Delay: 11 ns Typical (5-V Supplies) - Industry leading CMTI (min): ±100 k V/μs - Robust Electromagnetic patibility (EMC) - System-Level ESD, EFT, and Surge Immunity - Low Emissions - Isolation Barrier Life: > 40 Years - SOIC-16 Wide Body (DW) and Extra-Wide Body (DWW) Package Options - Safety-Related Certifications: - 8000 VPK Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 - 5.7 k VRMS Isolation for 1 Minute per UL 1577 - CSA ponent Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 End Equipment Standards - CQC Certification per GB4943.1-2011 - TUV Certification per EN 61010-1 and EN 60950-1 - All DW Package Certifications plete; DWW Package Certifications plete per UL, VDE, TUV and Planned for CSA and CQC 2 Applications Each isolation channel has a logic input and output buffer separated by silicon dioxide (Si O2) insulation barrier. This device es with enable pins which can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7831x device has two forward and one reverse-direction channels. If the input power or signal is lost, the default output is high for the ISO7831 device and low for the ISO7831F device. See Device Functional Modes for further details. Used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic patibility of ISO7831x has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions pliance. ISO7831x is available in a 16-pin SOIC wide-body (DW) and extra-wide body (DWW)...