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LM185-1.2-N Datasheet Preview

LM185-1.2-N Datasheet

Micropower Voltage Reference Diode

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LM185-1.2-N, LM285-1.2-N, LM385-1.2-N
www.ti.com
SNVS742E – JANUARY 2000 – REVISED APRIL 2013
LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode
Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N
FEATURES
1
2 ±1% and 2% Initial Tolerance
• Operating Current of 10μA to 20mA
• 1Ω Dynamic Impedance
• Low Temperature Coefficient
• Low Voltage Reference—1.235V
• 2.5V Device and Adjustable Device Also
Available
• LM185-2.5 Series and LM185 Series,
respectively
DESCRIPTION
The LM185-1.2-N/LM285-1.2-N/LM385-1.2-N are
micropower 2-terminal band-gap voltage regulator
diodes. Operating over a 10μA to 20mA current
range, they feature exceptionally low dynamic
impedance and good temperature stability. On-chip
trimming is used to provide tight voltage tolerance.
Since the LM185-1.2-N band-gap reference uses only
transistors and resistors, low noise and good long
term stability result.
Careful design of the LM185-1.2-N has made the
device exceptionally tolerant of capacitive loading,
making it easy to use in almost any reference
application. The wide dynamic operating range allows
its use with widely varying supplies with excellent
regulation.
The extremely low power drain of the LM185-1.2-N
makes it useful for micropower circuitry. This voltage
reference can be used to make portable meters,
regulators or general purpose analog circuitry with
battery life approaching shelf life.
Further, the wide operating current allows it to
replace older references with a tighter tolerance part.
The LM185-1.2-N is rated for operation over a 55°C
to 125°C temperature range while the LM285-1.2-N is
rated 40°C to 85°C and the LM385-1.2-N 0°C to
70°C. The LM185-1.2-N/LM285-1.2-N are available in
a hermetic TO package and the LM285-1.2-N/LM385-
1.2-N are also available in a low-cost TO-92 molded
package, as well as SOIC and SOT-23.
CONNECTION DIAGRAM
Figure 1. T0-92 Package (LP)
(Bottom View)
Figure 3. SOIC Package
* Pin 3 is attached to the Die Attach Pad
(DAP) and should be connected to Pin 2 or
left floating.
Figure 2. SOT-23
Figure 4. TO Package (NDV)
(Bottom View)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated




etcTI

LM185-1.2-N Datasheet Preview

LM185-1.2-N Datasheet

Micropower Voltage Reference Diode

No Preview Available !

LM185-1.2-N, LM285-1.2-N, LM385-1.2-N
SNVS742E – JANUARY 2000 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Reverse Current
30mA
Forward Current
Operating Temperature Range (4)
10mA
LM185-1.2-N
55°C to +125°C
LM285-1.2-N
40°C to +85°C
LM385-1.2-N
ESD Susceptibility (5)
0°C to 70°C
2kV
Storage Temperature
55°C to +150°C
Soldering Information
TO-92 package: 10 sec.
260°C
TO package:10 sec.
300°C
SOIC and SOT-23 Pkg.
Vapor phase (60 sec.)
215°C
Infrared (15 sec.)
220°C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. The specifications
apply only for the test conditions listed.
(2) Refer to RETS185H-1.2 for military specifications.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For elevated temperature operation, see Table 1.
(5) The human body model is a 100 pF capacitor discharged through a 1.5 kresistor into each pin.
Table 1. TJ(max) for Elevated Temperature Operation
DEVICE
LM185-1.2-N
TJ(max) (°C)
150
LM285-1.2-N
125
LM385-1.2-N
100
2 Submit Documentation Feedback
Copyright © 2000–2013, Texas Instruments Incorporated
Product Folder Links: LM185-1.2-N LM285-1.2-N LM385-1.2-N


Part Number LM185-1.2-N
Description Micropower Voltage Reference Diode
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