LM74722-Q1 Datasheet | Texas Instruments

Features - AEC-Q100 qualified with the following results - Device temperature grade 1: - 40°C to +125°C ambient operating temperature range - Device HBM ESD classification level 2 - Device CDM ESD classification level C4B - 3-V to 65-V input range - Reverse input protection down to - 65 V - Low quiescent current 35 µA (max) in operation - Low 3.3-µA (max) shutdown current (EN = Low) - Ideal diode operation with 13-m V A to C forward voltage drop regulation - Drives external back-to-back N-Channel MOSFETs - Integrated 30-m A boost regulator - Active rectification up to 200 k Hz - Fast response to reverse current blocking: 0.5 µs - Fast forward GATE turn ON delay: 0.72 µs - Adjustable overvoltage protection - Meets automotive ISO7637 transient requirements with a suitable TVS diode - Available in space saving 12-pin WSON package 2 Applications - Automotive battery protection - ADAS domain controller - Premium audio amplifier - Head unit Q1 VBA TT 12 V VOUT 3 Description The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to - 65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF parators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-k Hz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using...