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LMC6032 Datasheet Preview

LMC6032 Datasheet

CMOS Dual Operational Amplifier

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LMC6032
www.ti.com
SNOS609C – NOVEMBER 1994 – REVISED MARCH 2013
LMC6032 CMOS Dual Operational Amplifier
Check for Samples: LMC6032
FEATURES
1
2 Specified for 2 kΩ and 600 Ω Loads
• High Voltage Gain: 12 dB
• Low Offset Voltage Drift: 2.3 μV/°C
• Ultra Low Input Bias Current: 40 fA
• Input Common-mode Range Includes V
• Operating Range From +5V to +15V Supply
• ISS = 400 μA/Amplifier; Independent of V+
• Low Distortion: 0.01% at 10 kHz
• Slew Rate: 1.1 V/μs
• Improved Performance Over TLC272
APPLICATIONS
• High-Impedance Buffer or Preamplifier
• Current-to-Voltage Converter
• Long-Term Integrator
• Sample-and-Hold Circuit
• Medical Instrumentation
DESCRIPTION
The LMC6032 is a CMOS dual operational amplifier
which can operate from either a single supply or dual
supplies. Its performance features include an input
common-mode range that reaches ground, low input
bias current, and high voltage gain into realistic loads,
such as 2 kΩ and 600 Ω.
This chip is built with TI's advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC6034 datasheet for a CMOS quad
operational amplifier with these same features. For
higher performance characteristics refer to the
LMC662.
CONNECTION DIAGRAMS
8-Pin PDIP/SOIC
Top View
Figure 1. 10 Hz High-Pass Filter
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1994–2013, Texas Instruments Incorporated




etcTI

LMC6032 Datasheet Preview

LMC6032 Datasheet

CMOS Dual Operational Amplifier

No Preview Available !

LMC6032
SNOS609C – NOVEMBER 1994 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)
Differential Input Voltage
Supply Voltage (V+ V)
Output Short Circuit to V+
Output Short Circuit to V
Lead Temperature (Soldering, 10 sec.)
Storage Temperature Range
Junction Temperature
ESD Tolerance(4)
Power Dissipation
Voltage at Output/Input Pin
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
±Supply Voltage
16V
See (2)
See (3)
260°C
65°C to +150°C
150°C
1000V
See (5)
(V+) + 0.3V
(V) 0.3V
±18 mA
±5 mA
35 mA
(1) Absolute Maximum Ratings indicate limits beyond which damage to component may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
(2) Do not connect output to V+, when V+ is greater than 13V or reliability may be adversely affected.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or
multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30
mA over long term may adversely affect reliability.
(4) Human body model, 100 pF discharged through a 1.5 kΩ resistor.
(5) The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(max) – TA)/θJA.
Operating Ratings(1)
Temperature Range
Supply Voltage Range
Power Dissipation
Thermal Resistance (θJA)(3)
8-Pin PDIP
8-Pin SOIC
40°C TJ +85°C
4.75V to 15.5V
(2)
101°C/W
165°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to component may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
(2) For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ TA)/θJA.
(3) All numbers apply for packages soldered directly into a PC board.
2
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Product Folder Links: LMC6032
Copyright © 1994–2013, Texas Instruments Incorporated


Part Number LMC6032
Description CMOS Dual Operational Amplifier
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