LMG1205 Overview
The LMG1205 is designed to drive both the highside and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V,...
LMG1205 Key Features
- Independent high-side and low-side TTL logic inputs
- 1.2-A peak source, 5-A sink current
- High-side floating bias voltage rail
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable
- 0.6-Ω pulldown, 2.1-Ω pullup resistance
- Fast propagation times (35 ns typical)
- Excellent propagation delay matching
- Supply rail undervoltage lockout
- Low power consumption