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• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• Output Ports Have Equivalent 33-Ω Series
Resistors, So No External Resistors Are
Required
• High-Impedance State During Power Up
and Power Down
• 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• Flow-Through Architecture Optimizes PCB
Layout
• Package Options Include Plastic
Small-Outline (DW) Packages and Standard
Plastic 300-mil DIPs (NT)
SN64BCT2827C 10ĆBIT BUS/MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS415 − APRIL 1987 − REVISED NOVEMBER 1993
DW OR NT PACKAGE (TOP VIEW)
OE1 A1 A2 A3 A4 A5 A6 A7 A8 A9
A10 GND
1 2 3 4 5 6 7 8 9 10 11 12
24 VCC 23 Y1 22 Y2 21 Y3 20 Y4 19 Y5 18 Y6 17 Y7 16
SN64BCT2827C Datasheet
