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SN74S1051 Datasheet Preview

SN74S1051 Datasheet

12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION

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D Designed to Reduce Reflection Noise
D Repetitive Peak Forward Current to 200 mA
D 12-Bit Array Structure Suited for
Bus-Oriented Systems
description/ordering information
This Schottky barrier diode bus-termination array
is designed to reduce reflection noise on memory
bus lines. This device consists of a 12-bit
high-speed Schottky diode array suitable for
clamping to VCC and/or GND.
SN74S1051
12-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS018B – SEPTEMBER 1990 – REVISED MARCH 2003
D, N, NS, OR PW PACKAGE
(TOP VIEW)
VCC
D01
D02
D03
D04
D05
D06
GND
1
2
3
4
5
6
7
8
16 VCC
15 D12
14 D11
13 D10
12 D09
11 D08
10 D07
9 GND
ORDERING INFORMATION
TA
PACKAGE†
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
PDIP – N
Tube
SN74S1051N
SN74S1051N
0°C to 70°C
SOIC – D
Tube
Tape and reel
SN74S1051D
SN74S1051DR
S1051
SOP – NS
Tape and reel
SN74S1051NSR
74S1051
TSSOP – PW
Tape and reel
SN74S1051PWR
S1051
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are
available at www.ti.com/sc/package.
schematic diagrams
D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12
2 3 4 5 6 7 10 11 12 13 14 15
VCC VCC
1 16
89
GND GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 2003, Texas Instruments Incorporated
1




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SN74S1051 Datasheet Preview

SN74S1051 Datasheet

12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION

No Preview Available !

SN74S1051
12-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS018B SEPTEMBER 1990 REVISED MARCH 2003
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous forward current, IF: Any D terminal from GND or to VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total through all GND or VCC terminals . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, IFRM: Any D terminal from GND or VCC . . . . . . . . . . . . . . . . . . . . . 200 mA
Total through all GND or VCC terminals . . . . . . . . . . . . . . . . . . . . 1 A
Package thermal impedance, θJA (see Note 1): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73°C/W
N package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67°C/W
NS package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108°C/W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
These values apply for tw 100 µs, duty cycle 20%.
NOTE 1: The package thermal impedance is calculated in accordance with JESD 51-7.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 2)
PARAMETER
TEST CONDITIONS
MIN TYP§ MAX UNIT
VF Static forward voltage
To VCC
From GND
IF = 18 mA
IF = 50 mA
IF = 18 mA
IF = 50 mA
0.85 1.05
1.05 1.3
0.75 0.95
0.95 1.2
V
VFM Peak forward voltage
IF = 200 mA
1.45 V
IR Static reverse current
To VCC
From GND
VR = 7 V
5
µA
5
Ct Total capacitance
VR = 0 V,
VR = 2 V,
f = 1 MHz
f = 1 MHz
8 16
pF
48
§ All typical values are at VCC = 5 V, TA = 25°C.
NOTE 2: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER
TEST CONDITIONS
Ix Internal crosstalk current
Total IF current = 1 A,
Total IF current = 198 mA,
See Note 3
See Note 3
§ All typical values are at VCC = 5 V, TA = 25°C.
NOTE 3: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%
Static diode: VR = 5 V
The static diode input current is the internal crosstalk current, Ix.
MIN TYP§
0.8
0.02
MAX
2
0.2
UNIT
mA
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figures 1 and 2)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
trr Reverse recovery time IF = 10 mA, IRM(REC) = 10 mA, IR(REC) = 1 mA, RL = 100
8 16 ns
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265


Part Number SN74S1051
Description 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION
Maker etcTI
Total Page 18 Pages
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