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D CMOS/ EEPROM/ EPROM Technologies on
a Single Device – Mask-ROM Devices for High-Volume
Production – One-Time-Programmable (OTP) EPROM
Devices for Low-Volume Production – Reprogrammable-EPROM Devices for
Prototyping Purposes
D Internal System Memory Configurations
– On-Chip Program Memory Versions – ROM: 16K Bytes – EPROM: 16K Bytes
– Data EEPROM: 256 Bytes – Static RAM: 256 Bytes Usable as
Registers – Standby RAM With Separate Power
Supply Pin: 256 Bytes
D Flexible Operating Features
– Low-Power Modes: STANDBY and HALT – Commercial, Industrial, and Automotive
Temperature Ranges – Clock Options
– Divide-by-1 (2 MHz – 5 MHz SYSCLK) Phase-Locked Loop (PLL)
– Divide-by-4 (0.
TMS370C036A Datasheet
