Datasheet4U Logo Datasheet4U.com

TMS417800A Datasheet DYNAMIC RANDOM-ACCESS MEMORIES

Manufacturer: Texas Instruments

📥 Download Datasheet

General Description

The TMS417800A is a 16 777 216-bit dynamic random-access memory (DRAM) device organized as 2 097 152 words of eight bits.

It employs TI’s state-of-the-art technology for high performance, reliability, and low power.

This device

Overview

This data sheet is applicable to all TMS417800As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

D Organization .

.

Key Features

  • maximum RAS access times of 50-, 60-, and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS417800A is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). This package is designed for operation from 0°C to 70°C. TMS417800A 2097152 BY 8-BIT.

More Datasheets from Texas Instruments

Part Number Description
TMS417800 HIGH-SPEED DRAMS
TMS417809 HIGH-SPEED DRAMS
TMS417809A DYNAMIC RANDOM-ACCESS MEMORIES
TMS417400 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS417400A DYNAMIC RANDOM-ACCESS MEMORIES
TMS417400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS417409A DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100P DYNAMIC RANDOM-ACCESS MEMORIES
TMS416160 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS